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ChipPAC Qualification Results
Assembly Site: ChipPAC, Korea (CPK)
Package Style: QFP
| Product Technology PassivationDie Die Dimensions (mil) Lead Count Pkg. Dimension (mm) Preconditioning Level |
Duration | HFA3783IN SiGe BICMOS Sil/Nit/Polyimide 102 x 107 48 ld LQFP 7 x 7 x 1.4 Level 3 |
HIP52330DQ PASIC Nitrox 175 X 175 64 ld LQFP 10 x 10 x 1.4 Level 3 |
HFA3861BIN .35 CMOS Silox / Nitride 206 X 222 64 ld TQFP 10 x 10 x 1.0 Level 2 |
HSP50415VI CMOS Nitrox 243 X 315 100 ld MQFP 14 x 20 x 2.7 Level 2 |
| HTOL Ta = 125C |
1000 hr | 0 / 78 | np | 0 / 77 (a) | 0 / 78 |
| Temp/Humidity/Bias1 85C/85%RH |
1000 hr | 0 / 77 | np | 0 / 78 | 0 / 78 |
| Unbiased HAST 1 130C / 85% RH |
96 hr | 0 / 68 | 0 / 78 | 0 / 64 | 0 / 78 |
| Temperature Cycle 1 -40C to +125C |
1000 cyc
|
0 / 78 | 0 / 78 | 0 / 78 | 0 / 78 |
| Post Temperature Cycle Bond Pull (grams) -40C to +125C |
Average Std. Dev. Minimum Maximum |
10.5 1.5 7.3 14.4 |
12.0 1.5 8.9 18.9 |
7.9 1.0 4.9 11 |
7.0 1.2 4.0 10.8 |
| High Temp Storage Ta = 150C |
1000 hr | 0 / 63 | June 29 | 0 / 78 | 0 / 78 |
Note: 1. THB, HAST and Temp Cycle samples are moisture
preconditioned to the level shown in header using 235C / 240C IR reflow per IPC/JEDEC
Std. 020A
2. Only
valid assembly related fails shown.
3. np =
not performed due to board availability.
4. Some sample sizes decreased due to product availability.
Failure Analysis:
a. One unit failed a functional test after 1k hours.
Failure analysis located emission point within the die, but because of device
geometry the site could not be further investigated. ESD is
suspected. All package related evaluations (x-ray, C-SAM, visual
inspection, wire pull and pin to pin curve tracer analysis) yielded good
results. Based on the failure analysis this failure is not associated with
assembly and thus invalid for purposes of the qual. FA report # IA010051.