
I
Integrated Circuit. Plural: ICs (no apostrophe). See integrated circuit.
Insulated Gate Bipolar Transistor. A four-layer discrete
power device that combines the characteristics of a power MOS transistor and a
thyristor.
IGBT devices are usually found in high-voltage circuits (above 300V) because they can be
prepared with significantly lower values of RDS(on) than a power MOSFET with
the same die size. Also referred to as "COMFETs," "GEMFETs" and
"IGTs". Intersil is the inventor of the basic IGBT mechanism, and is a world
leader in advanced IGBT technology. See here for RDS(on).
Insulated Gate Field Effect Transistor. See MOSFET.
In-Line Monitor.
The use of computers and sophisticated mathematical algorithms to analyze, enhance, and
interpret digitized images.
Integrated Manufacturing Production Resource Scheduling
System. An Intersil software tool that produces production plans based upon
customer demand forecasts and manufacturing capabilities. The system was developed by
Intersil to integrate forecasting, material procurement, planning, and order-entry
processes as they relate to worldwide manufacturing requirements. Customer delivery dates
are generated interactively and are based upon a global manufacturing production plan.
In semiconductor technology, a material such as boron, phosphorus or arsenic added in
small quantities to a crystal to produce an excess of electrons (donor impurity) or holes
(acceptor impurity). Also called "dopant".
See I/O.
A material that is a poor conductor of electricity or heat, and used to separate
conductors from one another or to protect personnel from active electrical devices.
Examples: silicon dioxide (glass), silicon nitride, rubber, ceramics, wood.
An electronic circuit in which many active or passive elements are fabricated and
connected together on a continuous substrate, as opposed to discrete devices, such as
transistors, resistors, capacitors and diodes.
A power MOSFET that contains more than one active element or that allows non-intrusive
current monitoring. Intersil intelligent discrete devices, for example, provide
current-limiting and thermal-limiting functions to conventional power MOSFET capabilities.
See MOSFET.
A circuit in which power, logic and analog functions are integrated on the same
semiconductor chip. Intersil has an extensive library of general-function standard cells
that are used to fabricate such circuits.
The conductive path required to achieve connection from one circuit element to others
in a circuit.
Input/Output. Generally refers to the external connections of an IC that
tie it to the outside world. Supply pins and control pins are usually not considered I/O.
An atom that has either gained or lost electrons, making it a charged particle (either
positive or negative).
A means for adding dopants to semiconductor material. Charged atoms (ions) of elements
such as boron, phosphorus or arsenic are accelerated by an electric field into the
semiconductor material. Especially useful for very shallow (<1µm) distributions of dopants in a semiconductor. Ion implantation is usually done at room temperature, with the resulting implantation-induced lattice damage removed by annealing at temperatures of approximately 700oC. More precise than
diffusion doping.
Integrated Yield Management. See yield.
Integrated Yield Vehicle. See yield.
