J
See junction field effect transistor.
See junction isolation.
Just In Time. Term used in manufacturing to denote requirement for
delivery of products to the customer exactly when specified--neither too soon nor too
late. The objective is to reduce inventory level (work in process, as well as finished
goods). Such inventory reductions, in turn, lower storage expense and reduce manufacturing
cycle times.
Joint Test Action Group. (1) Test standards group
working on boundary scan and standard test interfaces. (2) Any of the standards
approved by this group. Some Intersil design libraries provide cells to implement the
chip-level standards, and design information is available for most other libraries.
The interface plane within a semiconductor crystal, at which the number of P- and
N-type carriers are exactly equal, with a surplus of P-type on one side of the junction
and N-type on the other.
A semiconductor device that operates by altering the conductivity of a region of the
semiconductor (the channel) between two contacts (source and drain) by application of a
voltage to a third terminal (gate). The current flow between source and drain is
controlled by the gate voltage. In a JFET device, the gate voltage is applied to the
channel across a P-N junction, in contrast to its application across an insulator in a
conventional MOSFET. JFETs are of two types: P-channel and N-channel, depending on whether
the channel is N-type or P-type. See FET, MOSFET.
A fabrication technique by which components in an integrated circuit are separated or
electrically isolated from each other by P-N junctions. Bipolar ICs generally begin with a
P-type wafer into which a buried layer pattern is first diffused. Then the N-type
epitaxial layer is grown, and P-type isolation wells are diffused around each area that is
to be electrically isolated from the other circuitry. Compare dielectric isolation.
