
R
Repeatability and Reproducibility.
The situation arising when inputs to a gate traverse parallel, but different, circuit
paths. Differing path delays can result in unpredictable signal arrival times at a gate,
and uncertain transition time for the output of the gate.
Specifies the amount of energy transferred to a material by ionizing radiation. One rad
is equal to the energy of 100 ergs per gram of material. The material must be specified,
because the energy differs with each material. 1 rad-Si=100 ergs/grams of silicon.
RADiation HARDened. See radiation
hardened circuit.
Integrated circuit that has been manufactured with special devices and isolation
techniques such that when exposed to heavy radiation it remains operational. Conventional
circuits will short out under such conditions because the radiation generates electrical
currents inside the semiconductor material. Radiation hardened circuits are one of
Intersil's core competencies, and Intersil is the recognized leader in the
rad-hard
market.
Terminology used to describe products or programs that must be capable of surviving and
operating in very high levels of radiation, including high total dose, high dose rate, and
SEU (single-event-upset) environments. Circuits requiring in excess of 1000k rads-Si are
considered strategic rad hard. See SEU.
Terminology used to describe products or programs that must be capable of surviving and
operating in medium levels of radiation, usually total-dose environments. Circuits
requiring up to 50k rads-Si are considered tactical rad hard.
Random-Access Memory. A memory that may be written to, or read
from any address location in any sequence. Also called a read/write memory. Random access
in the sense of providing access to any storage location in the memory. Stores digital
bits temporarily and can be rapidly changed as required. RAM constitutes the basic
read/write storage element in computers. See DRAM and SRAM.
The resistance between drain and source of a forward-biased power MOSFET at a specified
drain current and gate voltage. Intersil MegaFETS have on-resistance
values as low as 10 milliohms. See also MegaFET, power MOSFET, and R(on).
Data processing technique in which information is utilized as events occur and the
information is generated, as opposed to batch processing at a time unrelated to the time
the information was generated.
A device that converts alternating current into direct current. See diode.
A photomask used in a stepper. See mask, photolithography and stepper.
An advanced Intersil wafer process that will support high-speed 256k rad-hard
SRAMS.
The process features 0.8µm feature size and SIMOX substrates. This process is expected to
extend Intersil's technology lead in rad-hard CMOS beyond that currently provided by
TSOS4. See SIMOX, SRAMS, and TSOS4.
Reduced Instruction Set Computer (or Chip). A type
of processor architecture that processes programs more quickly than conventional
microprocessors because it uses a smaller, less complex set of instructions. Compare CISC.
Read-Only Memory. A memory in which the binary information located
at each address is fixed and cannot be changed subsequently. Permanently stores
information repeatedly used, such as tables of data, characters for electronic displays,
etc. In its virgin state, the ROM consists of a mosaic of undifferentiated cells. One type
of ROM is programmed by mask pattern as part of the last fabrication stage. Another
popular type known as PROM, is programmable in the field with the aid of programmer
equipment. Programmed data stored in ROMs are often called firmware. Compare EPROM.
on-Resistance. The output resistance of a power switching device when it is
forward biased to the fully "on" or conducting state. Especially important in
high-current switches, where the voltage drop across the power device must be minimized.
In a power MOSFET, R(on) is the same as RDS(on). See RDS(on).
Real-Time EXpress. A specialized 16-bit microcontroller developed
by Intersil for custom, real-time embedded data processing applications, primarily
military. See microcontroller.
A term associated with MOSFETs or IGBTs that are designed, manufactured and tested to
an avalanche energy specification. Also refers to electronic systems or devices that have
been strengthened or modified for better resistance to wear, stress and abuse--for
example, in space or under battlefield conditions or conditions of severe weather or dirt.
See radiation hardened circuit.
